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Triethylgallium is a metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of compound semiconductors.It is a clear, colorless, pyrophoric liquid and should be handled with caution. Triethylgallium can be a useful alternative to trimethylgallium in the metalorganic vapour phase epitaxy of compound semiconductors because films grown using TEGa have been shown to have a lower carbon impurity concentration.

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Triethylindium is an olorganic chemical compound from the group of organometallic compounds. Its chemical formula is C6H15In.It can be obtained by reacting an ether solution of indium(III) chloride with ethyl magnesium chloride.Triethylindium is a colorless, toxic, oxidation and hydrolysis-sensitive liquid. It is a monomer in the gaseous and dissolved state. The compound reacts with halomethanes to diethyl indium halides.Triethylindium is used to prepare indium phosphide layers for semiconductors.

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Trimethylantimony is an organoantimony compound with the formula Sb(CH3)3. It is a colorless pyrophoric and toxic liquid.It is synthesized by treatment of antimony trichloride and methyl Grignard Trimethylantimony is produced by anaerobic bacteria in antimony-rich soils.In contrast to trimethylphosphine, trimethylstibine is a weaker Lewis base. Trimethylantimony is used in the production of some III-V semiconductors.

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Trimethylboron is a stable boron source.It is a key material for the production of thin film solar cells,boron source for the simultaneous deposition of boron and carbon or as the boron source in BPSG deposition.

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Trimethylindium is the preferred organometallic source of indium for metalorganic vapour phase epitaxy (MOVPE) of indium-containing compound semiconductors, such as InP, InAs, InN, InSb, GaInAs, InGaN, AlGaInP, AlInP, AlInGaNP, etc.It is a white, crystalline and sublimable solid, with melting point 88 °C. TMI is pyrophoric (ignites spontaneously upon contact with air), and its decomposition is often found to be uncontrollable as the temperature of its surrounding exceeds its melting point (>88 °C) and reaches 101 °C and above. Trimethylindium can be produced by reacting InCl3 in diethyl ether solution either with the Grignard reagent, MeMgI, or methyllithium, LiMe.

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Trimethylolpropane is an organic compound. This colorless solid is a triol containing three hydroxy functional groups. Trimethylolpropane is widely used building block in the polymer industry. It is mainly consumed as a precursor to alkyd resins. Otherwise, acrylated and alkoxylated TMP's are used as multifunctional monomers to produce various coatings, Ethoxylated and propoxylated TMP, derived condensation of from TMP and the epoxides, are used for production of flexible polyurethanes.

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Tungsten Disulfide Industrial Grade 99%

Tungsten disulfide is gray fine particles or nano powder. It is a metal sulfide, which has property of semiconductor and diamagnetism. It is insoluble in water and alcohol, however dissolve in acid mixture of nitric acid and hydrofluoric acid and molten alkali. Tungsten(IV) sulfide is table at room temperature and pressure. Tungstic acid or tungsten is the raw material.

Tungsten Disulfide

CAS No.:12138-09-9 EINECS No.:235-243-3 Molecular Formula:WS2 Molecular Weight:247.97
Melting Point:1250℃ Density:7.5    


Tungsten(IV) sulfide is a new solid lubricant, which apply to lubricate at high temperature, high pressure, high load and high vacuum condition. When it adds in engineering plastics, self-lubricating parts turn out.

When mix it with some volatile solvent and spraying in metal surface, it can improve the service life of mould in impact forging and degree of finish of workpieces.

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Vanadium Carbide Industrial Grade 99.99%

Vanadium carbide is dark gray powder, which contains C 19.08% normally. It is belong to NaCl cubic crystal systems. VC is stable at room temperature and pressure. It dissolve in nitric acid and molten potassium nitrate, however not dissolve in cold water, hydrochloric acid and sulfuric acid. Vanadium pentoxidevanadium tetrachloridevanadium metal powder or vanadium hydride all can be the raw material.

Vanadium Carbide

CAS No.:12070-10-9 EINECS No.:235-122-5 Molecular Formula:VC Molecular Weight:62.95
Melting Point:2810℃ Boiling Point:3900℃ Density:5.77 Ambient Resistance:150
Lattice Constant:4.182      


Vanadium carbide powder acts as grain refiner in hard alloys, cutting tools and steel-making, which can improve alloys propertyobviously. It is also raw material for preparing wear-resistance thin film and semiconductor film. It is raw material for fine ceramics too.

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Vanadium Silicide Industrial Grade 99%

Vanadium silicide is dark gray powder or particle, which is minor metal silicide. It is ceramic material. Vanadium powder and silicon powder are the raw materials.

Vanadium Silicide

CAS No.:12039-87-1 EC No.:234-908-5 Molecular Formula:VSi2 Molecular Weight:107.11


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Vanadium Sulfide LAB GRADE 99%

vanadium sulfide vanadium trisulfide vanadium sesquisulphide

V2S3 paramagnetic material 99%

minor metal sulfide

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