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Gadolinium Nitride Industrial Grade 99.9%

Gadolinium nitride is black powder, which is a rare earth metal nitride powder of cubic crystal system. It own semiconductor property and  can process into thin film that deposit on MgO(100) or Si(100) using a plasma-enhanced ALD (PEALD) based process.

Gadolinium Nitride

Purity:Gd/RE 99.9% 3N

Particle size: -100mesh, -200mesh

CAS No.:25764-15-2 EINECS No.:247-250-9 Molecular Formula:GdN Molecular Weight:171.257


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Gadolinium Oxide Industrial Grade 99.9%

Gadolinium oxide is white amorphous powder, which is a kind of rare earth oxides. It exists in monazite and misch metal.  It tends to absorb moisture and carbon dioxide in air. Gadolinium(III) oxide is insoluble in water, however soluble in acid and form corresponding salts.

Gadolinium Oxide

CAS No.:12064-62-9 EINECS No.:235-060-9 Molecular Formula:Gd2O3 Molecular Weight:362.50
Melting Point:2330℃ Boiling Point:3900℃ Density:7.407  


Gadolinium trioxide mainly apply to process new magnetic material gadolinium gallium garnet (GGG), fluorescent powder for  projection television, X-ray intensifying screen and xerographic printer.

99.99% Gd2O3 is good for the host lattice of phosphor . GGG need 99.99% Gd2O3 crystal. In glass industry, gadolinium(III) oxide is component of special high refractive glass, which need 99.9% one.

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Gadolinium metal foils Purified 99.9%

gadolinium foil rare earth sheet

Gd REM 99.9% 99%

vacuum coating material, evaporation coating material, sputtering target

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Gallium Arsenide Industrial Grade 99.99%

Gallium arsenide is crystal of cubic crystal system, which is an important semiconductor material. It is available in pieces, ingots, rods, powders and wafers. It stable and don’t corrode by non-oxidizing acid under 600℃.GaAs could process into semi-insulating material that is triple electrical resistivity than silicon and germanium, which is for integrated circuit substrate and infrared detector. However it would decompose at high temperature, so the technique is complex to get ideal high purity monocrystal GaAs. Gallium metal and arsenic metal are the raw material.

Gallium Arsenide

CAS No.:1303-00-0 EINECS No.:215-114-8 Molecular Formula:GaAs Molecular Weight:144.64
Melting Point:1238℃ Density:6.307 UN 1557 6.1/PG 2 Purity: 99.999%


Gallium monoarsenide is raw material for processing LCD, LD, FET, HEMT, HBT, MMIC and MIMIC. It is also raw material for high speed integrated circuit and solar battery.

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Gallium Metal Industrial Grade 99.99%

Gallium metal is silvery white minor metal, which is liquid when temperature above 29℃, but solid when temperature under it. It is also soft even when solid.Ga is avaliable in liquid, solid, granule. Liquid gallium tends to undercool that mean it would’t solidify even temperature under 0℃. It slightly dissolve in mercury and form gallium amalgam. Liquid gallium can infiltrate glass, so it cannot use glass container to store.

Gallium Metal

Purity:99.99%, 99.999%, 99.99999%

CAS No.: 7440-55-3 EINECS No.: 231-163-8 Molecular Formula: Ga Molecular Weight: 69.723
Melting Point: 29.76℃ Boiling Point: 2403℃ Density: 5.095 UN2803 8/PG 3


Gallium metal mainly apply to produce semiconductor compounds as gallium arsenidegallium nitridegallium phosphide and so on. It is also dopant for semiconductor germanium, silicon.

99.99999% Ga is main raw material for gallium arsenidegallium phosphide and gallium antimonide. Those are for LED and infrared device manufacturing. 8N Ga is mainly for preparing superlattice as gallium source of MBE, quantum well and other advanced semiconductor deveices.

High purity gallium can be as additive for permanent magnet material and other alloys. It is also raw material for high purity alloys.

Liquid gallium is raw material for gallium alloys as gallium-vanadium, gallium-lithium, gallium-zirconium and so on. Those alloys are as superconductor.  It is also essential raw material for low-melting alloys as bismuth alloys, zinc alloys, lead alloys and so on.

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Gallium Nitride

Gallium Nitride is a very hard, mechanically stable wide band gap semiconductor material with high heat capacity and thermal conductivity. Gallium Nitride is the most important semiconductor material since silicon. It can be used to emit brilliant light in the form of light emitting diodes (LEDs) and laser diodes, as well as being the key material for next generation high frequency, high power transistors capable of operating at high temperatures.

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Gallium Selenide Industrial Grade 99.99%

Gallium selenide includes gallium(III) selenide and gallium(II) selenide, which are minor metalselenides. Ga2Se3 is reddish black brittle hard lumps, ingot piece or powder, however GaSe is dark brown crystal, which are both photoelectric material. GaSe is layer structure semiconductor as GaS. With temperature decrease, Max value of its photoelectric effect move to shortwave end. Selenium metal and gallium metal are raw material for both Ga2Se3 and GaSe.

Gallium Selenide

CAS No.:12024-24-7 Molecular Formula:Ga2Se3 Molecular Weight:376.32 Density:492
Boiling Point:1020℃      
CAS No.:12024-11-2 EINECS No.:234-689-6 Molecular Formual:GaSe Molecular Weight:148.68
Density:5.01 Melting Point:960℃


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Gallium Telluride Industrial Grade 99.999%

Gallium telluride is black crystal piece or powder, which is minor metal telluride. It is insoluble in water. GaTe is stable at room temperature and pressure. With temperature decrease, Max photoconduction of GaTe move to short wave end. Tellurium and gallium are the raw material.

Gallium Telluride


CAS No.:12024-14-5 EINECS No.:234-690-1 Molecular Fomrula:GaTe Molecular Weight:197.32
Density: 5.44 Melting Point:824℃


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Gamma lactonyl (meth)acrylates

Gamma lactonyl (meth)acrylates is used for OLED,LC,PR electronic products.

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Germane used for the deposition of epitaxial and amorphous silicon - germanium alloys.

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