Showa Denko expands silicon carbide wafers capacity in Japan

Showa Denko expands silicon carbide wafers capacity in Japan

9:27 AM, 9th June 2016
Showa Denko expands silicon carbide wafers capacity in Japan

TOKYO, JAPAN: Showa Denko KK (SDK) has expanded its capacity for producing high-grade silicon carbide (SiC) epitaxial wafers for power devices, which have already been marketed under the trade name of “High-Grade Epi” (HGE), and started mass production of HGE wafers. The expanded HGE production facility has a capacity to produce 3,000 wafers per month.

Since the launch of HGE in 2015, SDK has been working on sample shipment of it to device manufacturers at home and abroad, successfully getting good reputation among them.

HGE contributes to an improvement in reliability of SiC-MOSFET (metal oxide semiconductor field effect transistor) by controlling the number of basal plane dislocation, which is the typical crystal defect.  Moreover, the establishment of technology to lower the number of defects enabled us to mass-produce thick-film epitaxial wafers and p-type (a type of electrical conduction in semiconductors) epitaxial wafers, both for potential use in bipolar power devices.

These special epitaxial wafers were said to be difficult to produce with conventional technologies.  We expect that thick-film HGE we market will significantly contribute to the development of SiC-IGBT (insulated gate bipolar transistor), which can be used as ultra-high-voltage devices for power generation/transmission systems.

The size of the market for SiC epitaxial wafers for power devices is expected to reach 100 billion in 2025 as the early use of SiC power devices in vehicles is under consideration.  SDK will continue meeting the need of the market for high-quality SiC epitaxial wafers, aiming to contribute to the improvement in energy efficiency of power devices.

© Worldofchemicals News


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