Showa Denko increases silicon carbide wafer capacity 1500 units/month

Showa Denko increases silicon carbide wafer capacity to 1500 units/month

6:44 AM, 30th August 2012
Showa Denko increases silicon carbide wafer capacity to 1500 units/month
Appearance of Showa Denko, Silicon carbide (SiC) epitaxial wafers.

TOKYO, JAPAN: Showa Denko KK (SDK) has increased its four-inch silicon carbide (SiC) epitaxial wafer production capacity by 2.5 times, to 1,500 units a month, through facility expansion and improvement in production technology. These wafers, with high surface smoothness and low crystal defect, are being produced at SDK’s Chichibu plant in Saitama prefecture.

When compared with mainstream silicon-based semiconductors, SiC power devices using SiC epitaxial wafers can operate under high-voltage heavy current and at high temperatures. These features enable reductions in number of components and miniaturization of cooling devices, helping to make smaller and lighter power control modules. SiC power devices also reduce energy loss in the process of power control, resulting in substantial energy savings. Thus, SiC power devices will find a wide range of applications, including automobiles, railcars, and industrial/home electric appliances.

Following the capacity expansion, SDK will continue developing SiC epitaxial wafers with larger diametre, lower defect and higher uniformity. Specifically, SDK will accelerate development of six-inch SiC epitaxial wafers for heavy-current high-voltage applications.

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